Synthesis of Wet‐Chemically Prepared Porous‐Graphene Single Layers on Si/SiO 2 Substrate Increasing the Photoluminescence of MoS 2 in Heterostructures

Wet-chemical generation of pores in graphene is a challenging synthetic task. Although oxide available large quantities and chemically diverse, extended lattice defects already present from synthesis hamper the controlled growth pores. However, membrane, energy, or nanoelectronic applications essentially require uniform applications. Here, oxo-functionalized (oxoG), type with density vacancy defects, used as starting material. Pores are generated potassium permanganate treated oxoG heating room temperature to 400 °C. With etching time, size increases pore-diameters of, for example, 100–200 nm majority become accessible. The experiments conducted on single-layer level Si/SiO2 wafers. Flakes remain stable µm scale do not fold. process leads rims pores, which functionalized by carbonyl groups addition hydroxyl carboxyl groups. In addition, it found that heterostructures intrinsically n-doped MoS2 can be fabricated photoluminescence (PL) measurements reveal 10-fold increased PL. Thus, novel highly temperature-stable electron-accepting 2D material integrated into van der Waals heterostructures.